Hydrogen uptake of thin epitaxial vanadium (001) films

被引：20

作者：

Andersson, G

Aits, K

Hjörvarsson, B

机构：

[1] Univ Uppsala, Dept Phys, S-75121 Uppsala, Sweden

[2] Univ Konstanz, Fak Phys, D-78434 Constance, Germany

[3] Royal Inst Technol, Dept Phys, S-10044 Stockholm, Sweden

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2002年 / 334卷

关键词：

hydrogen absorbing materials; thin films; gas solid reactions; enthalpy; entropy;

D O I：

10.1016/S0925-8388(01)01743-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Hydrogen solubility isotherms between 170degreesC and 240degreesC in 50-100 mn thick epitaxial V (001) films were measured resistometrically. Hydrogen concentrations up to H/Vapproximate to0.9 (atomic ratio) were obtained without the crystalline structure deteriorating. At concentrations around 0.65-0.7, the hydrogen-hydrogen interaction switched from attractive to repulsive, indicating a phase transition with a critical temperature lower than for the bulk V-H system. The number of available hydrogen sites per V atom in the disordered phase, as deduced from the entropy change at low concentrations, is close to the bulk value. (C) 2002 Elsevier Science BY All rights reserved.

引用

页码：14 / 19

页数：6

共 17 条

[1]

ALEFELD G, 1972, BERICH BUNSEN GESELL, V76, P746

[2] Effects of varying compressive biaxial strain on the hydrogen uptake of thin vanadium (001) layers [J].