Growth of organic semiconductors for hybrid solar cell application

被引:36
作者
Ackermann, J [1 ]
Videlot, C [1 ]
El Kassmi, A [1 ]
机构
[1] Fac Sci Luminy, UMR CNRS 6114, Lab Mat Mol & Biomat, F-13288 Marseille 09, France
关键词
hybrid solar cell; quaterthiophene; morphology; atomic force microscopy;
D O I
10.1016/S0040-6090(01)01578-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we present a study of the growth of quaterthiophene (4T), a linear conjugated oligomer of thiophene behaving as a p-type semiconductor, on n-doped GaAs and Si substrates to form hybrid heterojunction solar cells. We focus on the influence of the substrate and the different surface preparations on the morphology of the organic thin films. The 4T deposited by thermic evaporation on GaAs forms films consisting of grains of some hundred of nanometers and large lamella defects. However, in the case of Si as substrate we demonstrate almost defect-free high ordered films with grain sizes of several micrometers up to a film thickness of 250 run. The photovoltaic characteristics of the hybrid solar cells made by the heterojunction organic-inorganic semiconductor systems are investigated. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:157 / 161
页数:5
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