Surface properties of nanodiamond films deposited by electrophoresis on Si(100)

被引:30
作者
Maillard-Schaller, E [1 ]
Kuettel, OM
Diederich, L
Schlapbach, L
Zhirnov, VV
Belobrov, PI
机构
[1] Univ Fribourg, Dept Solid State Phys, CH-1700 Fribourg, Switzerland
[2] Inst Christallog, Moscow 117333, Russia
[3] Inst Biophys, Krasnoyarsk 660036, Russia
关键词
energy band diagram; nanodiamond; Raman spectroscopy; surface characterization;
D O I
10.1016/S0925-9635(98)00381-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface properties of diamond nanoparticles (40-50 Angstrom in diameter) have been investigated by X-ray photoelectron spectroscopy (XPS), UV photoelectron spectroscopy (UPS) and Raman spectroscopy. The diamond nanoparticles have been deposited on flat Si(100) substrates by electrophoresis/dielectrophoresis. The as-deposited films are strongly oxidized and present a 1-2% nitrogen content. After treatment at 850 degrees C in H-2 plasma for 60 min, the oxygen is removed, and the position of the C 1s core-level peak indicates a n-type electronic comportment of the diamond nanoparticles. Raman spectroscopy of the as-deposited film shows a sp(3) contribution at 1321 cm(-1) and a sp(2) contribution around 1620 cm(-1). The 12 cm(-1) shift of the sp(3) contribution with respect to the bulk diamond peak at 1333 cm(-1) is attributed to a phonon confinement effect due to the size of the diamond particles. The H-2 plasma treatment induces a size decrease of the nanocrystallites confirmed by Raman and scanning electron microscopy (SEM) measurements. UPS spectroscopy shows a negative electron affinity of -0.2 eV of the hydrogenated nanodiamond film. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:805 / 808
页数:4
相关论文
共 15 条
[1]   SPATIALLY RESOLVED RAMAN STUDIES OF DIAMOND FILMS GROWN BY CHEMICAL VAPOR-DEPOSITION [J].
AGER, JW ;
VEIRS, DK ;
ROSENBLATT, GM .
PHYSICAL REVIEW B, 1991, 43 (08) :6491-6499
[2]   Diamond-graphite phase transition in ultradisperse-diamond clusters [J].
Aleksenskii, AE ;
Baidakova, MV ;
Vul, AY ;
Davydov, VY ;
Pevtsova, YA .
PHYSICS OF THE SOLID STATE, 1997, 39 (06) :1007-1015
[3]  
ALEXENSKY AY, 1995, APPL DIAM P 3 INT C, P457
[4]   Field emission from silicon and molybdenum tips coated with diamond powder by dielectrophoresis [J].
Choi, WB ;
Cuomo, JJ ;
Zhirnov, VV ;
Myers, AF ;
Hren, JJ .
APPLIED PHYSICS LETTERS, 1996, 68 (05) :720-722
[5]   CHARACTERIZATION OF LOW-PRESSURE DEPOSITED DIAMOND FILMS BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J].
CHOURASIA, AR ;
CHOPRA, DR ;
SHARMA, SC ;
GREEN, M ;
DARK, CA ;
HYER, RC .
THIN SOLID FILMS, 1990, 193 (1-2) :1079-1086
[6]  
DIEDERICH L, UNPUB SURF SCI
[7]   STUDY OF ULTRADISPERSED DIAMOND POWDERS OBTAINED USING EXPLOSION ENERGY [J].
KUZNETSOV, VL ;
ALEKSANDROV, MN ;
ZAGORUIKO, IV ;
CHUVILIN, AL ;
MOROZ, EM ;
KOLOMICHUK, VN ;
LIKHOLOBOV, VA ;
BRYLYAKOV, PM ;
SAKOVITCH, GV .
CARBON, 1991, 29 (4-5) :665-668
[8]   ONION-LIKE CARBON FROM ULTRA-DISPERSE DIAMOND [J].
KUZNETSOV, VL ;
CHUVILIN, AL ;
BUTENKO, YV ;
MALKOV, IY ;
TITOV, VM .
CHEMICAL PHYSICS LETTERS, 1994, 222 (04) :343-348
[9]   FIELD-EMISSION CHARACTERISTICS OF DIAMOND-COATED SILICON FIELD EMITTERS [J].
LIU, J ;
ZHIRNOV, VV ;
MYERS, AF ;
WOJAK, GJ ;
CHOI, WB ;
HREN, JJ ;
WOLTER, SD ;
MCCLURE, MT ;
STONER, BR ;
GLASS, JT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02) :422-426
[10]   Local heteroepitaxy of diamond on silicon (100): A study of the interface structure [J].
MaillardSchaller, E ;
Kuttel, OM ;
Groning, P ;
Groning, O ;
Agostino, RG ;
Aebi, P ;
Schlapbach, L ;
Wurzinger, P ;
Pongratz, P .
PHYSICAL REVIEW B, 1997, 55 (23) :15895-15904