A growth interruption technique for stacking fault-free nanowire superlattices

被引：26

作者：

Mohseni, Parsian K. ^{[1
]}

LaPierre, Ray R. ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 02期

基金：

加拿大自然科学与工程研究理事会;

关键词：

MOLECULAR-BEAM EPITAXY; ZINC-BLENDE POLYTYPISM; GAAS NANOWIRES; SILICON NANOWIRES; WURTZITE; HETEROSTRUCTURES; SEMICONDUCTORS; MECHANISMS;

D O I：

10.1088/0957-4484/20/2/025610

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An experimental approach to achieving phase purity in nanowires through molecular beam epitaxy growth is presented. Superlattice heterostructured nanowires were grown, consisting of alternating layers of GaAsP and GaP. The observed core-multishell heterostructure, extending axially and radially, is attributed to simultaneous Au-assisted vertical growth and diffusion-limited radial growth along lateral nanowire facets. Growth interruptions at the GaAsP/GaP interfaces allowed for the elimination of stacking faults and the growth of nanowires with a single-crystalline wurtzite phase.

引用

页数：6

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