Multiple quantum well AlGaAs nanowires

被引：26

作者：

Chen, Chen ^{[1
]}

Braidy, Nadi ^{[2
]}

Couteau, Christophe ^{[4
]}

Fradin, Cecile ^{[3
]}

Weihs, Gregor ^{[4
]}

LaPierre, Ray ^{[1
]}

机构：

[1] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technologies, Hamilton, ON L8S 4L7, Canada

[2] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada

[3] McMaster Univ, Dept Phys & Astron, Dept Biochem & Biomed Sci, Hamilton, ON L8S 4M1, Canada

[4] Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada

来源：

NANO LETTERS | 2008年 / 8卷 / 02期

关键词：

D O I：

10.1021/nl0726306

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

This letter reports on the growth, structure, and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Microphotoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to nonsegmented NWs due to carrier confinement and sidewall passivation.

引用

页码：495 / 499

页数：5

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