Self-directed growth of AlGaAs core-shell nanowires for visible light applications

被引:70
作者
Chen, Chen
Shehata, Shyemaa
Fradin, Cecile
LaPierre, Ray [1 ]
Couteau, Christophe
Weihs, Gregor
机构
[1] McMaster Univ, Ctr Emerging Device Technol, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4M1, Canada
[3] McMaster Univ, Dept Biochem & Biomed Sci, Hamilton, ON L8S 4M1, Canada
[4] Univ Waterloo, Inst Quantum Comp, Waterloo, ON N2L 3G1, Canada
关键词
D O I
10.1021/nl070874k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Al0.37Ga0.63As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during growth as a consequence of the different Al and Ga adatom diffusion lengths.
引用
收藏
页码:2584 / 2589
页数:6
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