Single quantum dot nanowire LEDs

被引：319

作者：

Minot, Ethan D.

Kelkensberg, Freek

van Kouwen, Maarten

van Dam, Jorden A.

Kouwenhoven, Leo P.

Zwiller, Valery ^{[1
]}

Borgstrom, Magnus T.

Wunnicke, Olaf

Verheijen, Marcel A.

Bakkers, Erik P. A. M.

机构：

[1] Kavli Inst Nanosci, Delft, Netherlands

[2] Philips Res Labs, Eindhoven, Netherlands

来源：

NANO LETTERS | 2007年 / 7卷 / 02期

关键词：

D O I：

10.1021/nl062483w

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the n-InP and p-InP ends of the wire, making these devices promising candidates for electrically driven quantum optics experiments. We have investigated the operation of these nanoLEDs with a consistent series of experiments at room temperature and at 10 K, demonstrating the potential of this system for single photon applications.

引用

收藏

页码：367 / 371

页数：5

相关论文

共 28 条

[1] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[2] Broadband ZnO single-nanowire light-emitting diode [J].

Bao, Jiming ;

Zimmler, Mariano A. ;

Capasso, Federico ;

Wang, Xiaowei ;

Ren, Z. F. .

NANO LETTERS, 2006, 6 (08) :1719-1722

[3] Interface study on heterostructured GaP-GaAs nanowires [J].

Borgstrom, Magnus T. ;

Verheijen, Marcel A. ;

Immink, George ;

de Smet, Thierry ;

Bakkers, Erik P. A. M. .

NANOTECHNOLOGY, 2006, 17 (16) :4010-4013

[4]

Borgström MT, 2005, NANO LETT, V5, P1439, DOI 10.1021/nl050802y

[5] Entanglement transfer from electron spins to photons in spin light-emitting diodes containing quantum dots [J].

Cerletti, V ;

Gywat, O ;

Loss, D .

PHYSICAL REVIEW B, 2005, 72 (11)

[6] SI-IMPLANTED N+-INP/P-INP JUNCTIONS - ELECTRICAL CHARACTERIZATION AND NOISE [J].

CONJEAUD, AL ;

ORSAL, B ;

DHOUIB, A ;

ALABEDRA, R ;

GOUSKOV, L .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1707-1713

[7] Single-electron tunneling in InP nanowires [J].

De Franceschi, S ;

van Dam, JA ;

Bakkers, EPAM ;

Feiner, LF ;

Gurevich, L ;

Kouwenhoven, LP .

APPLIED PHYSICS LETTERS, 2003, 83 (02) :344-346

[8] Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].

Gudiksen, MS ;

Lauhon, LJ ;

Wang, J ;

Smith, DC ;

Lieber, CM .

NATURE, 2002, 415 (6872) :617-620

[9] GAAS P-N-JUNCTION FORMED IN QUANTUM WIRE CRYSTALS [J].

HARAGUCHI, K ;

KATSUYAMA, T ;

HIRUMA, K ;

OGAWA, K .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :745-747

[10] Electron accumulation in single InP quantum dots observed by photoluminescence [J].

Hessman, D ;

Persson, J ;

Pistol, ME ;

Pryor, C ;

Samuelson, L .

PHYSICAL REVIEW B, 2001, 64 (23)