SI-IMPLANTED N+-INP/P-INP JUNCTIONS - ELECTRICAL CHARACTERIZATION AND NOISE

被引：5

作者：

CONJEAUD, AL

ORSAL, B

DHOUIB, A

ALABEDRA, R

GOUSKOV, L

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.336435

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1707 / 1713

页数：7

共 26 条

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[2]

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GROVES, SH .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :198-200

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BULMAN, GE ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1982, 40 (07) :589-591

[5]

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[6]

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[7]

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[8]

LECOY G, 1969, THESIS USTL MONTPELL

[9] DARK CURRENT AND BREAKDOWN CHARACTERISTICS OF DISLOCATION-FREE INP PHOTO-DIODES [J].

LEE, TP ;

BURRUS, CA .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :587-589

[10]

LEROSE, 1983, THESIS U P M CURIE P

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