A Distributed Bragg Reflector Silicon Evanescent Laser

被引：94

作者：

Fang, Alexander W. ^{[1
]}

Koch, Brian R. ^{[2
]}

Jones, Richard ^{[2
]}

Lively, Erica ^{[1
]}

Liang, Di ^{[1
]}

Kuo, Ying-Hao ^{[1
]}

Bowers, John E. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Intel Corp, Photon Technol Lab, Santa Clara, CA 95054 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 17-20期

关键词：

Hybrid integration; semiconductor lasers; silicon-on-insulator technology;

D O I：

10.1109/LPT.2008.2003382

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA and 11 mW, respectively. The device generates open eye-diagrams under direct modulation at data rates up to 4 Gb/s.

引用

页码：1667 / 1669

页数：3

共 8 条

[1]

BASS M, 2001, HDB OPTICS, V4

[2] A distributed feedback silicon evanescent laser [J].

Fang, Alexander W. ;

Lively, Erica ;

Kuo, Hao ;

Liang, Di ;

Bowers, John. E. .

OPTICS EXPRESS, 2008, 16 (07) :4413-4419

[3] Optimization of modulation bandwidth in DBR lasers with detuned Bragg reflectors [J].

Feiste, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (12) :2371-2379

[4]

Park H., 2008, ADV OPTICAL TECHNOLO

[5] Plasma-assisted InP-to-Si low temperature wafer bonding [J].

Pasquariello, D ;

Hjort, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (01) :118-131

[6] Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit [J].

Roelkens, G. ;

Van Thourhout, D. ;

Baets, R. ;

Notzel, R. ;

Smit, M. .

OPTICS EXPRESS, 2006, 14 (18) :8154-8159

[7] Low temperature InP/Si wafer bonding [J].

Tong, QY ;

Gan, Q ;

Hudson, G ;

Fountain, G ;

Enquist, P .

APPLIED PHYSICS LETTERS, 2004, 84 (05) :732-734

[8]

VANCAMPENHOUT J, OPT EXPRESS, V15, P6744

← 1 →