Plasma-assisted InP-to-Si low temperature wafer bonding

被引：188

作者：

Pasquariello, D ^{[1
]}

Hjort, K ^{[1
]}

机构：

[1] Uppsala Univ, Dept Mat Sci, Angstrom Lab, S-75121 Uppsala, Sweden

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 01期

关键词：

indium; phosphorous alloys; plasma; silicon; wafer bonding;

D O I：

10.1109/2944.991407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The applicability of wafer bonding as a tool to integrate the dissimilar material system InP-to-Si is presented and discussed with recent examples of InP-based optoelectronic devices on Si. From there, the lowering of annealing temperature in wafer bonding by plasma-assisted bonding is the essence of this review paper. Lower annealing temperatures would further launch wafer bonding as a competitive technology and enable a wider use of it. Oxygen plasma treatment has been proven to be very feasible in achieving a strong bonding already at low temperatures. It was also seen that in our experimental setups the results depended on what plasma parameters that were used, since different plasma parameters create different surface conditions.

引用

页码：118 / 131

页数：14

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