Smart-Cut® process using metallic bonding:: Application to transfer of Si, GaAs, InP thin films

被引：27

作者：

Aspar, B ^{[1
]}

Jalaguier, E ^{[1
]}

Mas, A ^{[1
]}

Locatelli, C ^{[1
]}

Rayssac, O ^{[1
]}

Moriceau, H ^{[1
]}

Pocas, S ^{[1
]}

Papon, AM ^{[1
]}

Michaud, JF ^{[1
]}

Bruel, M ^{[1
]}

机构：

[1] LETI CEA Grenoble, Dept Microtechnol & Optron, F-38054 Grenoble 9, France

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 12期

关键词：

D O I：

10.1049/el:19990663

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ability to obtain thin films using the Smart-Cut(R) process combined with metallic bonding is demonstrated. New structures have been realised from thin films of Si, GaAs or InP bonded to silicon substrates via metallic layers.

引用

页码：1024 / 1025

页数：2

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