Transfer of 3 in GaAs film on silicon substrate by proton implantation process

被引：75

作者：

Jalaguier, E

Aspar, B

Pocas, S

Michaud, JF

Zussy, M

Papon, AM

Bruel, M

机构：

[1] CEA Grenoble, LETI, Dept Microtechnol, F-38054 Grenoble 9, France

[2] CEA Grenoble, LETI, Dept Optron, F-38054 Grenoble, France

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 04期

关键词：

D O I：

10.1049/el:19980265

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time, transfer of a thin monocrystalline GaAs film from its original bulk substrate onto a silicon substrate was achieved hy proton implantation and wafer bonding. Successful transfers of 3 in GaAs film are presented.

引用

页码：408 / 409

页数：2

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