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Silicon carbide on insulator formation using the Smart Cut process
被引:94
作者
:
DiCioccio, L
论文数:
0
引用数:
0
h-index:
0
机构:
LETI-CEA Grenoble, Dept. de Microtechnologies, 38054 Grenoble Cedex
DiCioccio, L
LeTiec, Y
论文数:
0
引用数:
0
h-index:
0
机构:
LETI-CEA Grenoble, Dept. de Microtechnologies, 38054 Grenoble Cedex
LeTiec, Y
Letertre, F
论文数:
0
引用数:
0
h-index:
0
机构:
LETI-CEA Grenoble, Dept. de Microtechnologies, 38054 Grenoble Cedex
Letertre, F
Jaussaud, C
论文数:
0
引用数:
0
h-index:
0
机构:
LETI-CEA Grenoble, Dept. de Microtechnologies, 38054 Grenoble Cedex
Jaussaud, C
Bruel, M
论文数:
0
引用数:
0
h-index:
0
机构:
LETI-CEA Grenoble, Dept. de Microtechnologies, 38054 Grenoble Cedex
Bruel, M
机构
:
[1]
LETI-CEA Grenoble, Dept. de Microtechnologies, 38054 Grenoble Cedex
来源
:
ELECTRONICS LETTERS
|
1996年
/ 32卷
/ 12期
关键词
:
wafer bonding;
silicon carbide;
D O I
:
10.1049/el:19960717
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
The Smart Cut process [1, 2] has been applied for the first time td SiC, in order to form silicon carbide on insulator (SiCOI) structures. These structures have been formed on polycrystalline SiC and on silicon substrates.
引用
收藏
页码:1144 / 1145
页数:2
相关论文
共 4 条
[1]
SILICON-ON-INSULATOR MATERIAL TECHNOLOGY
BRUEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
LETI-CEA Département de Microtechniques, CENG, 38054 Grenoble Cedex
BRUEL, M
[J].
ELECTRONICS LETTERS,
1995,
31
(14)
: 1201
-
1202
[2]
BRUEL M, 1996, NUCL INSTRUM METH B, P313
[3]
IVANOV PA, 1995, SEMICONDUCTORS+, V29, P1003
[4]
SILICON-CARBIDE WAFER BONDING
TONG, QY
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
TONG, QY
GOSELE, U
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
GOSELE, U
YUAN, C
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
YUAN, C
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
STECKL, AJ
REICHE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
REICHE, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1995,
142
(01)
: 232
-
236
←
1
→
共 4 条
[1]
SILICON-ON-INSULATOR MATERIAL TECHNOLOGY
BRUEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
LETI-CEA Département de Microtechniques, CENG, 38054 Grenoble Cedex
BRUEL, M
[J].
ELECTRONICS LETTERS,
1995,
31
(14)
: 1201
-
1202
[2]
BRUEL M, 1996, NUCL INSTRUM METH B, P313
[3]
IVANOV PA, 1995, SEMICONDUCTORS+, V29, P1003
[4]
SILICON-CARBIDE WAFER BONDING
TONG, QY
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
TONG, QY
GOSELE, U
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
GOSELE, U
YUAN, C
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
YUAN, C
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
STECKL, AJ
REICHE, M
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK INST MICROSTRUCT PHYS,D-06120 HALLE,GERMANY
REICHE, M
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1995,
142
(01)
: 232
-
236
←
1
→