Silicon carbide on insulator formation using the Smart Cut process

被引:94
作者
DiCioccio, L
LeTiec, Y
Letertre, F
Jaussaud, C
Bruel, M
机构
[1] LETI-CEA Grenoble, Dept. de Microtechnologies, 38054 Grenoble Cedex
关键词
wafer bonding; silicon carbide;
D O I
10.1049/el:19960717
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Smart Cut process [1, 2] has been applied for the first time td SiC, in order to form silicon carbide on insulator (SiCOI) structures. These structures have been formed on polycrystalline SiC and on silicon substrates.
引用
收藏
页码:1144 / 1145
页数:2
相关论文
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