Basic mechanisms involved in the Smart-Cut(R) process

被引:121
作者
Aspar, B
Bruel, M
Moriceau, H
Maleville, C
Poumeyrol, T
Papon, AM
Claverie, A
Benassayag, G
AubertonHerve, AJ
Barge, T
机构
[1] LETI/CEA Dept. de Microtechnologies, CEA Grenoble, F38054 Grenoble Cedex 9
[2] CEMES/CNRS, F31055 Toulouse Cedex 2
[3] SOITEC SA, Site Technologique ASTEC, F38041 Grenoble Cedex
关键词
D O I
10.1016/S0167-9317(97)00055-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The Smart-Cut process used to produce SOI wafers is based on proton implantation and wafer bonding. In this paper, the behavior of the cavities induced by hydrogen implantation in silicon is studied. The effect of a bonded stiffener on the splitting mechanism is shown. The quality of bonding depends greatly on the cleaning process which enables a high bonding energy and a high quality material to be achieved.
引用
收藏
页码:233 / 240
页数:8
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