Transfer of structured and patterned thin silicon films using the Smart-Cut(R) process

被引：30

作者：

Aspar, B

Bruel, M

Zussy, M

Cartier, AM

机构：

[1] LETI-CEA Grenoble, Dept. de Microtechnologies, 38054 Grenoble Cedex 9

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 21期

关键词：

thin film devices; integrated circuit technology; silicon-on-insulator;

D O I：

10.1049/el:19961305

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The feasibility of transferring patterned and multilayered thin films, simulating part of the stacked structure of a CMOS integrated circuit, from their original bulk silicon substrate to a final substrate, was demonstrated using the Smart-Cut process [1].

引用

页码：1985 / 1986

页数：2