LOW-THRESHOLD PULSED OPERATION OF LONG-WAVELENGTH LASERS ON SI FABRICATED BY DIRECT BONDING

Low-threshold room-temperature pulsed operation of InGaAs/InGaAsP multiquantum-well (MQW)lasers (lambda similar or equal to 1.55 mu m) on Si substrates is demonstrated. These laser structures were first mown on InP substrates, then bonded at 700 degrees C onto Si substrates with buffer layers. The mesa-stripe broad-area lasers have a threshold current density of 1.7 kA/cm(2) (50 mu m mesa width, 330 mu m cavity length), which is comparable to the value for lasers on InP substrates.