Low temperature InP layer transfer

被引：42

作者：

Tong, QY

Chao, YL

Huang, LJ

Gösele, U

机构：

[1] Duke Univ, Wafer Bonding Lab, Durham, NC 27708 USA

[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 04期

关键词：

D O I：

10.1049/el:19990226

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High quality single crystalline 3 in Inp thin layers were transferred onto oxidised Si substrates at 150 degrees C by wafer bonding and layer splitting from InP wafers which were co-implanted by B and H ions with the H implantation performed at 90 degrees C.

引用

页码：341 / 342

页数：2

共 9 条

[1]

Bruel M, 1997, ELEC SOC S, V97, P3

[2]

CHAO YL, 1999, UNPUB MRS SPRING M

[3] GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON [J].