DC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistor

被引：4

作者：

Daumiller, I ^{[1
]}

Schmid, P

Kohn, E

Kirchner, C

Kamp, M

Ebeling, KJ

Pond, LL

Weitzel, C

机构：

[1] Univ Ulm, Dept Elect Devices & Circuits, D-89069 Ulm, Germany

[2] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

[3] Motorola Inc, Semicond Prod Sector, Tempe, AZ 85284 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 18期

关键词：

D O I：

10.1049/el:19991041

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

First small signal, large signal and RF power characteristics of experimental 3 mu m gatelength AlN/GaN devices between RT and 200 degrees C are reported. A high drain breakdown of 42V and the absence of dispersion effects indicate that this challenging heterostructure is indeed attractive for the development of high power/high speed devices.

引用

页码：1588 / 1590

页数：3

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ELECTRONICS LETTERS, 1997, 33 (20) :1742-1743

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