Weak localization in ultrananocrystalline diamond

被引：41

作者：

Mares, JJ

Hubík, P

Kristofik, J

Kindl, D

Fanta, M

Nesládek, M

Williams, O

Gruen, DM

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 16253 6, Czech Republic

[2] CEA Saclay, LIST, F-91191 Gif Sur Yvette, France

[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[4] Argonne Natl Lab, Div Sci Mat, Argonne, IL 60439 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 09期

关键词：

D O I：

10.1063/1.2176853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter we present results of magnetotransport measurements, carried out on heavily nitrogen-doped ultrananocrystalline diamond films, prepared by plasma-enhanced chemical vapor deposition. This material having at room temperature appreciably high electric conductivity (similar to 4200 S m(-1)) revealed surprisingly at Kelvin temperatures a giant negative magnetoresistance reaching up to 22% at 1.28 K and at 8 T. The analysis of experimental data has borne evidence of the fact that the transport in this subsystem has a character of low-dimensional disordered metal and it is controlled by quantum interference effects of electrons resulting in their weak localization. (c) 2006 American Institute of Physics.

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