Synthesis and characterization of highly-conducting nitrogen-doped ultrananocrystalline diamond films

被引:422
作者
Bhattacharyya, S [1 ]
Auciello, O [1 ]
Birrell, J [1 ]
Carlisle, JA [1 ]
Curtiss, LA [1 ]
Goyette, AN [1 ]
Gruen, DM [1 ]
Krauss, AR [1 ]
Schlueter, J [1 ]
Sumant, A [1 ]
Zapol, P [1 ]
机构
[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
关键词
D O I
10.1063/1.1400761
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ultrananocrystalline diamond (UNCD) films with up to 0.2% total nitrogen content were synthesized by a microwave plasma-enhanced chemical-vapor-deposition method using a CH4(1%)/Ar gas mixture and 1%-20% nitrogen gas added. The electrical conductivity of the nitrogen-doped UNCD films increases by five orders of magnitude (up to 143 Ohm (-1) cm(-1)) with increasing nitrogen content. Conductivity and Hall measurements made as a function of film temperature down to 4.2 K indicate that these films have the highest n-type conductivity and carrier concentration demonstrated for phase-pure diamond thin films. Grain-boundary conduction is proposed to explain the remarkable transport properties of these films. (C) 2001 American Institute of Physics.
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页码:1441 / 1443
页数:3
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