Marathon testing of optical materials for 193-nm lithographic applications

被引:11
作者
Liberman, V [1 ]
Rothschild, M [1 ]
Sedlacek, JHC [1 ]
Uttaro, RS [1 ]
Bates, AK [1 ]
Van Peski, C [1 ]
机构
[1] MIT, Lincoln Lab, Lexington, MA 02420 USA
来源
LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 1998 | 1999年 / 3578卷
关键词
D O I
10.1117/12.344432
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have undertaken a systematic evaluation of both bulk materials and optical coatings designed for 193-nm lithographic applications. These studies are performed at realistic fluences (<1 to several mJ/cm(2)/pulse) and pulse counts in excess of 10(9). Measurements of absorption in fused silica show a large variation in performance for different samples in both initial and laser-induced absorption. Calcium fluoride samples show less variation in laser-induced absorption and appear to be more stable under irradiation of 0.2-1 billion pulses. Laser-induced densification of fused silica appears to follow an empirical power law; however, an order of magnitude spread in densification is observed among grades. For optical antireflectance coatings, we have characterized the initial "laser-cleaning" phenomenon for various coatings. We have observed that laser-cleaned coatings deposited on CaF2 substrates exhibit higher initial optical losses at 193 ma than their counterparts on SiO2 substrates. However, the losses for coatings on CaF2 substrates are reduced over irradiation times of 0.2-1 billion pulses to final values comparable to their SiO2 counterparts. Finally, we have characterized various catastrophic failures of coating material, such as induced losses, adhesion failure and laser-induced thinning.
引用
收藏
页码:2 / 15
页数:14
相关论文
共 17 条
[1]   193-nm excimer-laser-induced densification of fused silica [J].
Allan, DC ;
Smith, C ;
Borrelli, NF ;
Seward, TP .
OPTICS LETTERS, 1996, 21 (24) :1960-1962
[2]  
ARAUJO RJ, 1998, P SPIE
[3]   Densification of fused silica under 193-nm excitation [J].
Borrelli, NF ;
Smith, C ;
Allan, DC ;
Seward, TP .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1997, 14 (07) :1606-1615
[4]   ArF lasers for production of semiconductor devices with CD&lt;0.15 μm [J].
Duffey, TP ;
Embree, T ;
Ishihara, T ;
Morton, R ;
Partlo, WN ;
Watson, T ;
Sandstrom, R .
OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 :1014-1020
[5]   Pulse-length dependence of absorptance and degradation rate of fused silica at 248 nm. [J].
Eva, E ;
Mann, K ;
Thomas, S .
LASER-INDUCED DAMAGE IN OPTICAL MATERIALS: 1996, 1997, 2966 :72-79
[6]  
GERMER T, UNPUB
[7]   Stability of optical interference coatings exposed to low-fluence 193nm ArF radiation [J].
Heber, J ;
Thielsch, R ;
Blaschke, H ;
Kaiser, N ;
Mann, K ;
Eva, E ;
Leinhos, U ;
Gortler, A .
OPTICAL MICROLITHOGRAPHY XI, 1998, 3334 :1041-1047
[8]   STRUCTURE OF THIN FLUORIDE FILMS DEPOSITED ON AMORPHOUS SUBSTRATES [J].
KAISER, U ;
KAISER, N ;
WEISSBRODT, P ;
MADEMANN, U ;
HACKER, E ;
MULLER, H .
THIN SOLID FILMS, 1992, 217 (1-2) :7-16
[9]   SUDDEN ONSET OF STRONG ABSORPTION FOLLOWED BY FORCED RECOVERY IN KRF LASER-IRRADIATED FUSED-SILICA [J].
KRAJNOVICH, DJ ;
POUR, IK ;
TAM, AC ;
LEUNG, WP ;
KULKARNI, MV .
OPTICS LETTERS, 1993, 18 (06) :453-455
[10]   TESTING OF THE DURABILITY OF SINGLE-CRYSTAL CALCIUM-FLUORIDE WITH AND WITHOUT ANTIREFLECTION COATINGS FOR USE WITH HIGH-POWER KRF EXCIMER LASERS [J].
KRAJNOVICH, DJ ;
KULKARNI, M ;
LEUNG, W ;
TAM, AC ;
SPOOL, A ;
YORK, B .
APPLIED OPTICS, 1992, 31 (28) :6062-6075