Effect of mis-orientation of mesa-stripes on the growth of InGaAs quantum wires by selective molecular beam epitaxy

In this paper, the effect of mis-orientation of mesa-stripes on the In0.53Ga0.47As ridge quantum wire formation in our selective MBE growth procedure is studied. Scanning electron microscope (SEM), atomic force microscope (AFM), and cathodoluminescence (CL) observations revealed that the InGaAs ridge quantum wires were modulated into segments along the wires by the growth on the mis-oriented mesa-stripes. Particularly, in the case of the mis-orientation angle of 13 degrees, pseudo-periodic segment formation was successfully achieved in the wires, resulting in the formation of a prl iodic array of 3-dimensional carrier confining dot structures.