THEORETICAL GAIN OF QUANTUM-WELL WIRE LASERS

被引：145

作者：

ASADA, M

MIYAMOTO, Y

SUEMATSU, Y

机构：

[1] Tokyo Inst of Technology, Dep of, Physical Electronics, Tokyo, Jpn, Tokyo Inst of Technology, Dep of Physical Electronics, Tokyo, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 02期

关键词：

D O I：

10.1143/JJAP.24.L95

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L95 / L97

页数：3

共 15 条

[1] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT
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[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 939 - 941
[2] THE TEMPERATURE-DEPENDENCE OF THE THRESHOLD CURRENT OF GAINASP-INP DH LASERS
ASADA, M
ADAMS, AR
STUBKJAER, KE
SUEMATSU, Y
ITAYA, Y
ARAI, S
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 611 - 619
[3] GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS
ASADA, M
KAMEYAMA, A
SUEMATSU, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) : 745 - 753
[4] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT
BURNHAM, RD
STREIFER, W
SCIFRES, DR
LINDSTROM, C
PAOLI, TL
HOLONYAK, N
[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1095 - 1097
[5] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES
CHIN, R
HOLONYAK, N
VOJAK, BA
HESS, K
DUPUIS, RD
DAPKUS, PD
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21
[6] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21
[7] Harsee S. D., 1982, ELECTRON LETT, V18, P870
[8] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[9] DYNAMIC BEHAVIOR OF A GAAS-ALGAAS MQW LASER DIODE
IWAMURA, H
SAKU, T
ISHIBASHI, T
OTSUKA, K
HORIKOSHI, Y
[J]. ELECTRONICS LETTERS, 1983, 19 (05) : 180 - 181
[10] TOWARD QUANTUM WELL WIRES - FABRICATION AND OPTICAL-PROPERTIES
PETROFF, PM
GOSSARD, AC
LOGAN, RA
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 635 - 638

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