2-D analysis of device parasitics for 800/1000 GHz fT/fmax SiGe HBT

被引：17

作者：

Shi, Y ^{[1
]}

Niu, GF ^{[1
]}

机构：

[1] Auburn Univ, Elect & Comp Engn Dept, Alabama Microelect Sci & Technol Ctr, Auburn, AL 36849 USA

来源：

PROCEEDINGS OF THE 2005 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2005年

关键词：

D O I：

10.1109/BIPOL.2005.1555244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using 2D energy balance simulations, various factors limiting f(T) and f(max) in scaled SiGe HBTs are examined. A regional parasitic analysis is made to identify the various intrinsic and extrinsic contributions. The impact of different scaling schemes on f(T) and f(max) are also discussed.

引用

页码：252 / 255

页数：4

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