230 GHz self-aligned SiGeCHBT for 90 nm BiCMOS technology

被引：27

作者：

Chevalier, P ^{[1
]}

Fellous, C ^{[1
]}

Rubaldo, L ^{[1
]}

Dutartre, D ^{[1
]}

Laurens, M ^{[1
]}

Jagueneau, T ^{[1
]}

Leverd, F ^{[1
]}

Bord, S ^{[1
]}

Richard, C ^{[1
]}

Lenoble, D ^{[1
]}

Bonnouvrier, J ^{[1
]}

Marty, M ^{[1
]}

Perrotin, A ^{[1
]}

Gloria, D ^{[1
]}

Saguin, F ^{[1
]}

Barbalat, B ^{[1
]}

Beerkens, R ^{[1
]}

Zerounian, N ^{[1
]}

Aniel, F ^{[1
]}

Chantre, A ^{[1
]}

机构：

[1] STMicroelectronics, F-38926 Crolles, France

来源：

PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2004年

关键词：

D O I：

10.1109/BIPOL.2004.1365786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a 230 GHz self-aligned SiGeC HBT featuring a selective epitaxial base and an arsenic-doped monocrystalline emitter. These technical choices are presented and discussed with respect to BiCMOS performance objectives and integration constraints.

引用

页码：225 / 228

页数：4

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