High performance 0.25μm SiGe and SiGe:C HBTs using non selective epitaxy

被引：35

作者：

Baudry, H ^{[1
]}

Martinet, B ^{[1
]}

Fellous, C ^{[1
]}

Kermarrec, O ^{[1
]}

Campidelli, Y ^{[1
]}

Laurens, M ^{[1
]}

Marty, M ^{[1
]}

Mourier, J ^{[1
]}

Troillard, G ^{[1
]}

Monroy, A ^{[1
]}

Dutartre, D ^{[1
]}

Bensahel, D ^{[1
]}

Vincent, G ^{[1
]}

Chantre, A ^{[1
]}

机构：

[1] ST Microelect, Ctr Commun Microelect Crolles, F-38921 Crolles, France

来源：

PROCEEDINGS OF THE 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2001年

关键词：

D O I：

10.1109/BIPOL.2001.957855

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A robust 0.25mum double-poly SiGe HBT structure using non selective epitaxy has been developed. The device features 70/90GHz f(T)/f(max) with pure SiGe base in 0.25mum BiCMOS technology. Performances up to 120/100GHz f(T)/f(max) are demonstrated for SiGe:C base transistors.

引用

页码：52 / 55

页数：4

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