A high performance low complexity SiGe HBT for BiCMOS integration

被引：16

作者：

Chantre, A ^{[1
]}

Marty, M ^{[1
]}

Regolini, JL ^{[1
]}

Mouis, M ^{[1
]}

de Pontcharra, J ^{[1
]}

Dutartre, D ^{[1
]}

Morin, C ^{[1
]}

Gloria, D ^{[1
]}

Jouan, S ^{[1
]}

Pantel, R ^{[1
]}

Laurens, M ^{[1
]}

Monroy, A ^{[1
]}

机构：

[1] France Telecom, Ctr Natl Etud Telecommun, F-38243 Meylan, France

来源：

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年

关键词：

D O I：

10.1109/BIPOL.1998.741887

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A low complexity 0.35 mu m SiGe HBT technology, using a quasi self-aligned emitter/base structure on a non selective Si/SiGe epitaxial base, is described. Excellent high frequency performances (fm,, up to 71GHz) are obtained, opening the way to a highly manufacturable SiGe BiCMOS technology.

引用

页码：93 / 96

页数：4

共 7 条

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Onai, T .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :795-798

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