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A high-speed low 1/f noise SiGe HBT technology using epitaxially-aligned polysilicon emitters

被引：41
作者：
Jouan, S
Planche, R
Baudry, H
Ribot, P
Chroboczek, JA
Dutartre, D
Gloria, D
Laurens, M
Llinares, P
Marty, M
Monroy, A
Morin, C
Pantel, R
Perrotin, A
de Pontcharra, J
Regolini, JL
Vincent, G
Chantre, A
机构：
[1] France Telecom, CNET, F-38243 Grenoble, France
[2] ST Microelect, F-38921 Crolles, France
[3] LETI, CEA, F-38054 Grenoble 9, France
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 07期
关键词：
bipolar; HBT; high frequency; 1/f noise; polysilicon emitter; SiGe;
D O I：
10.1109/16.772506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 200-mm 0.35-mu m silicon-germanium heterojunction bipolar transistor (SiGe HBT) technology involving epitaxially-aligned polysilicon emitters is described. The devices are shown to combine the high speed performances typical for poly-Si emitter SiGe base devices (f(max) up to 70 GHz) and the low 1/f noise properties of monocrystalline emitter structures (noise figure-of-merit KB as low as 7.2 x 10(-10) mu m(2)). Statistical current gain data are used to demonstrate the manufacturability of this innovative SiGe HBT technology.
引用
收藏
页码：1525 / 1531
页数：7
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