Low 1/f noise SiGe HBTs with application to low phase noise microwave oscillators

被引：22

作者：

Gruhle, A

Mahner, C

机构：

[1] Daimler Benz AG, D-89081 Ulm, Germany

[2] Tem Telefunken Microelect Gmbh, D-74025 Heilbronn, Germany

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 24期

关键词：

1/f noise; heterojunction bipolar transistors; microwave oscillators;

D O I：

10.1049/el:19971363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiGe HBTs featuring a high quality oxide passivation show ideal Gummel plots and low 1/f noise with corner frequencies down to 300Hz. The measured K-B-factor of 2.6 x 10(-10)mu m(2)s is the lowest of any previously reported HBT. With an f(T) of 40GHz, the devices are ideal for low phase noise microwave oscillators. A simple 10GHz microstrip resonator showed -100dB(c) at 100kHz off carrier.

引用

页码：2050 / 2052

页数：3

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[2]

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[3]

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