Integration of organic based Schottky junctions into crossbar arrays by standard UV lithography

被引：16

作者：

Katsia, E. ^{[1
]}

Tallarida, G. ^{[1
]}

Kutrzeba-Kotowska, B. ^{[1
]}

Ferrari, S. ^{[1
]}

Bundgaard, E. ^{[2
]}

Sondergaard, R. ^{[2
]}

Krebs, F. C. ^{[2
]}

机构：

[1] CNR INFM, Lab Nazl MDM, I-20041 Agrate Brianza, Italy

[2] Tech Univ Denmark, Riso Natl Lab Sustainable Energy, DK-4000 Roskilde, Denmark

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 06期

关键词：

UV lithography; Organic Schottky diodes; Crossbar arrays;

D O I：

10.1016/j.orgel.2008.08.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The integration of polymers into microelectronic devices is a challenging task, because the standard processes used in device fabrication, most notably photolithography, are not fully compatible with such materials. In this study, we demonstrate a possible route for the integration of micron size organic based Schottky diodes in a crossbar architecture, by standard UV lithography. The proposed integration route features a limited number of process steps and prevents the exposure of the active materials to UV. This approach was developed using poly(3-hexylthiophene) as a model compound and was successfully applied to different organic semiconductors. The electrical characteristics of the as prepared junctions reveal the successful patterning and demonstrate the compatibility of the process sequence steps with the organic materials. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：1044 / 1050

页数：7

共 36 条

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