Nondestructive photolithography of conducting polymer structures

被引：25

作者：

Chan, JR ^{[1
]}

Huang, XQ ^{[1
]}

Song, AM ^{[1
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M60 1QD, Lancs, England

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2159073

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated a nondestructive method using ultraviolet (UV) photolithography to fabricate micrometer-sized conducting polymer structures. By coating a polymer film on patterned photoresist and then performing liftoff, UV exposure to the conducting polymer film was prevented throughout the lithography processes. We created features down to 1 mu m with high yield. Such complementary metal-oxide-semiconductor-compatible microfabrication can be applied generally to various organic films, and may allow the speed of organic electronics to be improved. Organic thin-film transistors (OTFTs) were fabricated using poly(3-hexylthiophene) as the active material, and typical OTFT characteristics were obtained. (c) 2006 American Institute of Physics.

引用

页码：1 / 4

页数：4

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