Full counting statistics for a single-electron transistor:: Nonequilibrium effects at intermediate conductance

被引：40

作者：

Utsumi, Y

Golubev, DS

Schön, G

机构：

[1] Univ Karlsruhe, Inst Theoret Festkoperphys, D-76128 Karlsruhe, Germany

[2] RIKEN, Condensed Matter Theory Lab, Wako, Saitama 3510198, Japan

[3] PN Lebedev Phys Inst, IE Tamm Dept Theoret Phys, Moscow 119991, Russia

[4] Forschungszentrum Karlsruhe, Inst Nanotechnol, D-76021 Karlsruhe, Germany

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 96卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.96.086803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We evaluate the current distribution for a single-electron transistor with intermediate strength tunnel conductance. Using the Schwinger-Keldysh approach and the drone (Majorana) fermion representation, we account for the renormalization of system parameters. Nonequilibrium effects induce a lifetime broadening of the charge-state levels, which suppress large current fluctuations.

引用

页数：4

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