Resonnant tunneling action in ZnO/Zn0.8Mg0.2O double barrier devices

被引：1

作者：

Krishnamoorthy, S ^{[1
]}

Iliadis, AA ^{[1
]}

Inumpudi, A ^{[1
]}

Choopun, S ^{[1
]}

Vispute, RD ^{[1
]}

Venkatesan, T ^{[1
]}

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA

来源：

2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ISDRS.2001.984542

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A ZnO/Zn0.8Mg0.2O double barrier resonant tunneling device (DBRTD) is reported here for the first time. The structures consist of a ZnO quantum well, with thicknesses of 6 nm, 8 nm, and 50 nm, placed between two Zn0.8Mg0.2O barriers, with a thickness of 7 nm. The structures were grown by pulsed laser deposition (PLD) on c-cut sapphire substrates. Negative differential resistance (NDR) peaks were obtained at room temperature and at 200 K. The ground states for the wells were evaluated from photoluminescence spectroscopy measurements, and found to be 266.3 meV and 238.8 meV for the 6 rim and 8 nm well respectively. The FWHM of the photoluminescence peaks was found to be 5.3 and 5.6 meV at 77 K, for the 6 nm and 8 nm wells respectively, indicating high quality hetero-interfaces.

引用

页码：450 / 453

页数：4

共 8 条

[1] Resonant tunneling in (001)- and (111)-oriented III-V double-barrier heterostructures under transverse and longitudinal stresses [J].

Albrecht, JD ;

Cong, L ;

Ruden, PP ;

Nathan, MI ;

Smith, DL .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7763-7769

[2]

CHANG S, 1999, IEEE SOL STAT SENS A, P41

[3] Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire [J].

Choopun, S ;

Vispute, RD ;

Noch, W ;

Balsamo, A ;

Sharma, RP ;

Venkatesan, T ;

Iliadis, A ;

Look, DC .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :3947-3949

[4] Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy [J].

Makino, T ;

Chia, CH ;

Tuan, NT ;

Segawa, Y ;

Kawasaki, M ;

Ohtomo, A ;

Tamura, K ;

Koinuma, H .

APPLIED PHYSICS LETTERS, 2000, 76 (24) :3549-3551

[5] Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature [J].

Su, YK ;

Chang, JR ;

Lu, YT ;

Lin, CL ;

Wu, KM ;

Wu, ZX .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (04) :146-148

[6] Improved ITO thin films with a thin ZnO buffer layer by sputtering [J].

Sun, XW ;

Wang, LD ;

Kwok, HS .

THIN SOLID FILMS, 2000, 360 (1-2) :75-81

[7] Piezoelectric contributions to the electrical behavior of ZnO varistors [J].

Verghese, PM ;

Clarke, DR .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :4430-4438

[8] High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides [J].

Vispute, RD ;

Talyansky, V ;

Trajanovic, Z ;

Choopun, S ;

Downes, M ;

Sharma, RP ;

Venkatesan, T ;

Woods, MC ;

Lareau, RT ;

Jones, KA ;

Iliadis, AA .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2735-2737

← 1 →