Novel AlInAsSb/InGaAs double-barrier resonant tunneling diode with high peak-to-valley current ratio at room temperature

被引：9

作者：

Su, YK ^{[1
]}

Chang, JR

Lu, YT

Lin, CL

Wu, KM

Wu, ZX

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 04期

关键词：

current-voltage characteristic; current ratio; metalorganic vapor phase epitaxy; peak current density; peak-to-valley current ratio; tunneling diode;

D O I：

10.1109/55.830963

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a novel Al0.66In0.34As0.85Sb0.15/ In0.53Ga0.47As double-barrier resonant tunneling diode grown by metalorganic vapor phase epitaxy, A high peak-to-valley current ratio of 46 and a peak current density of 22 kA/cm(2) were obtained at room temperature.

引用

页码：146 / 148

页数：3

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