MULTIPLE-STATE RESONANT-TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE AND ITS APPLICATION AS A FREQUENCY-MULTIPLIER

被引：39

作者：

SEN, S

CAPASSO, F

CHO, AY

SIVCO, DL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 10期

关键词：

D O I：

10.1109/55.17835

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：533 / 535

页数：3

共 8 条

[1] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].

CAPASSO, F ;

KIEHL, RA .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1366-1368

[2] QUANTUM-WELL RESONANT TUNNELING BIPOLAR-TRANSISTOR OPERATING AT ROOM-TEMPERATURE [J].

CAPASSO, F ;

SEN, S ;

GOSSARD, AC ;

HUTCHINSON, AL ;

ENGLISH, JH .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (10) :573-576

[3]

FUTATSUGI T, 1987, IEDM, P877

[4] 11-BIT PARITY GENERATOR WITH A SINGLE, VERTICALLY INTEGRATED RESONANT TUNNELLING DEVICE [J].

LAKHANI, AA ;

POTTER, RC ;

HIER, HS .

ELECTRONICS LETTERS, 1988, 24 (11) :681-683

[5] 3-DIMENSIONAL INTEGRATION OF RESONANT TUNNELING STRUCTURES FOR SIGNAL-PROCESSING AND 3-STATE LOGIC [J].

POTTER, RC ;

LAKHANI, AA ;

BEYEA, D ;

HIER, H ;

HEMPFLING, E ;

FATHIMULLA, A .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2163-2164

[6] NEW RESONANT-TUNNELING DEVICES WITH MULTIPLE NEGATIVE-RESISTANCE REGIONS AND HIGH ROOM-TEMPERATURE PEAK-TO-VALLEY RATIO [J].

SEN, S ;

CAPASSO, F ;

SIVCO, D ;

CHO, AY .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :402-404

[7] RESONANT TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE - DIGITAL AND SIGNAL-PROCESSING APPLICATIONS WITH REDUCED CIRCUIT COMPLEXITY [J].

SEN, S ;

CAPASSO, F ;

CHO, AY ;

SIVCO, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) :2185-2191

[8] A MULTIPLE-STATE MEMORY CELL BASED ON THE RESONANT TUNNELING DIODE [J].

SODERSTROM, J ;

ANDERSSON, TG .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) :200-202

← 1 →