RESONANT TUNNELLING IN ALLNAS/GAINAS DOUBLE BARRIER DIODES GROWN BY MOCVD

被引：9

作者：

HODSON, PD

ROBBINS, DJ

WALLIS, RH

DAVIES, JI

MARSHALL, AC

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 03期

关键词：

D O I：

10.1049/el:19880124

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / 188

页数：2

共 9 条

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[2]

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PHYSICAL REVIEW LETTERS, 1987, 58 (12) :1256-1259

[4] QUANTUM-WELL WIDTH DEPENDENCE OF NEGATIVE DIFFERENTIAL RESISTANCE OF IN0.52AL0.48AS/IN0.53GA0.47AS RESONANT TUNNELING BARRIERS GROWN BY MBE [J].

MUTO, S ;

INATA, T ;

SUGIYAMA, Y ;

NAKATA, Y ;

FUJII, T ;

OHNISHI, H ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (03) :L220-L222

[5] MEASUREMENT OF THE CONDUCTION-BAND DISCONTINUITY OF MOLECULAR-BEAM EPITAXIAL GROWN IN0.52AL0.48AS/IN0.53GA0.47AS, N-N HETEROJUNCTION BY C-V PROFILING [J].

PEOPLE, R ;

WECHT, KW ;

ALAVI, K ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :118-120

[6] ROOM-TEMPERATURE OPERATION OF GA0.47IN0.53AS/AL0.48IN0.52AS RESONANT TUNNELING DIODES [J].

SEN, S ;

CAPASSO, F ;

HUTCHINSON, AL ;

CHO, AY .

ELECTRONICS LETTERS, 1987, 23 (23) :1229-1231

[7] OBSERVATION OF INTRINSIC BISTABILITY IN RESONANT-TUNNELING STRUCTURES - COMMENT [J].

SOLLNER, TCLG .

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[8]

TOOMBS GA, 1987, INT C GAAS RELATED C

[9] MULTIBARRIER TUNNELING IN GA1-XALXAS/GAAS HETEROSTRUCTURES [J].

VASSELL, MO ;

LEE, J ;

LOCKWOOD, HF .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5206-5213

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