Electronic stopping power of B-10 in Si in random and [100] channeling directions

被引：15

作者：

dosSantos, JHR ^{[1
]}

Behar, M ^{[1
]}

Grande, PL ^{[1
]}

Boudinov, H ^{[1
]}

Stoll, R ^{[1
]}

Klatt, C ^{[1
]}

Kalbitzer, S ^{[1
]}

机构：

[1] MAX PLANCK INST KERNPHYS, D-69029 HEIDELBERG, GERMANY

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.55.13651

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of B-10 stopping powers in random and Si [100] directions. The measurements were carried out in the 500-9000 keV energy range for the channeling case and in the 300-800 keV for the random one. For the channeling measurements, the low energy data (500-800 keV) follow a v(s) regime with s = 0.90 +/- 0.06 whereas, for the random data, dE/dx proportional to v(s) with s = 1.1 +/- 0.2. Both results are in good agreement with the prediction of current theories. On the other side, the experimental random B-10 stopping power values (for energies up to 650 keV) are in fair agreement with the ones obtained from a scaling procedure by Ziegler, Biersack, and Littmark. However, for energies higher than 650 keV, slight but systematic differences are observed.

引用

页码：13651 / 13657

页数：7