Dc electric field induced second-harmonic generation spectroscopy of the Si(001)-SiO2 interface: Separation of the bulk and surface non-linear contributions

被引：22

作者：

Aktsipetrov, OA

Fedyanin, AA

Melnikov, AV

Dadap, JI

Hu, XF

Anderson, MH

Downer, MC

Lowell, JK

机构：

[1] MOSCOW MV LOMONOSOV STATE UNIV,DEPT PHYS,MOSCOW 119899,RUSSIA

[2] UNIV TEXAS,DEPT PHYS,AUSTIN,TX 78712

[3] ADV MICRO DEVICES INC,AUSTIN,TX 78741

来源：

THIN SOLID FILMS | 1997年 / 294卷 / 1-2期

基金：

俄罗斯基础研究基金会;

关键词：

second-harmonic generation spectroscopy; silicon;

D O I：

10.1016/S0040-6090(96)09217-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

D.c. electric field induced second-harmonic generation (SHG) spectroscopy of the Si(001)-SiO2 interface was studied both experimentally and theoretically. To describe the experimental results the general phenomenological model of d.c. induced SHG in centrosymmetric semiconductors is developed, taking into account surface and bulk field dependent as well as field independent contributions to the non-linear polarization. The solution of an inverse problem within this model of d.c. induced SHG allows all surface and bulk contributions to the non-linear response from an Si(001)-SiO2 interface to be distinguished.

引用

页码：231 / 234

页数：4

共 13 条

[1]

Aktsipetrov O. A., 1984, Soviet Physics - Doklady, V29, P37

[2] OPTICAL SECOND-HARMONIC GENERATION INDUCED BY A DC ELECTRIC-FIELD AT THE SI-SIO2 INTERFACE [J].