Electrical characteristics of heteroprocessed Pb(Zr0.52Ti0.48)O-3 films

Sol-gel derived 10% Pb excess Pb(Zr0.52Ti0.48)O-3 (PZT) layers placed at the top and bottom of rf-sputtered PZT films are very effective in decreasing the microcracks occurring on the surface of rf-sputtered PZT films during postannealing at 600, 650, and 700 degrees C. The deposition of PZT films is conducted on Pt/Ti/SiO2/Si(100) substrates at room temperature. The surface microstructure and crystallographic structure of buffered PZT films are investigated through scanning electron microscopy and x-ray-diffraction analysis. In addition, electrical measurements are also examined through hysteresis, dielectric constant and loss, J-V, and fatigue measurements. The P-E hysteresis measurements show an increase in the remanent polarization (12.1, 22.45, 34.64 mu C/cm(2)) and a decrease in the coercive fields (108, 72.9, 68.3 kV/cm) with the increase of postannealing temperature. Dielectric constant and and tan delta are varied from 523 to 1330 and 0.0274 to 0.0738 with the increase of annealing temperature. By applying 1 MHz rectangular pulse up to 5X10(10) cycles for fatigue test, the 33% reduction of polarization is also observed. (C) 1996 American Institute of Physics.