Growth of thick zinc magnesium oxide by liquid phase epitaxy

被引：8

作者：

Kobayashi, Jun ^{[2
,4
]}

Sekiwa, Hideyuki ^{[2
,4
]}

Miyamoto, Miyuki ^{[4
]}

Ohashi, Naoki ^{[1
,2
]}

Sakaguchi, Isao ^{[1
,2
]}

Wada, Yoshiki ^{[2
]}

Adachi, Yutaka ^{[1
,2
]}

Haneda, Hajime ^{[3
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, Optron Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[3] Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[4] Mitsubishi Gas Chem Co Ltd, Tokyo Res Lab, Katsushika Ku, Tokyo 1250051, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 07期

基金：

日本学术振兴会;

关键词：

D O I：

10.1143/APEX.1.071201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Very thick (about 0.5 mm) single crystals of a (Zn,Mg)O were grown on ZnO substrate by using a liquid phase epitaxy (LPE) technique. The source materials, ZnO and MgO, were dissolved in a PbO-Bi2O3 flux, and the (Zn,Mg)O was crystallized on the c-face of ZnO substrate in contact with the melt. The obtained crystal had high crystallinity similar to that of the ZnO substrate and exhibited n-type conductivity with relatively high Hall mobility. (C) 2008 The Japan Society of Applied Physics.

引用

页码：0712011 / 0712013

页数：3

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