In-plane patterning of aggregated nanoparticle layers

被引:11
作者
Erokhin, V
Troitsky, V
Erokhina, S
Mascetti, G
Nicolini, C
机构
[1] Univ Genoa, Dept Biophys M&O Sci & Technol, I-16132 Genoa, Italy
[2] Fondaz ElBA, I-16132 Genoa, Italy
[3] Pola Nazl Bioelettron, I-16132 Genoa, Italy
[4] Univ Parma, Dept Phys, I-43100 Parma, Italy
[5] Univ Parma, INFM, I-43100 Parma, Italy
[6] X Ist Calcolo Sci Comp, Genoa, Italy
[7] Inst Sci Comp, Genoa, Italy
关键词
D O I
10.1021/la0115785
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
An in-plane patterning process of aggregated nanoparticle thin layers of different inorganic conducting and semiconducting materials produced in Langmuir-Blodgett precursors is developed using film irradiation with an electron beam. This film treatment performs cross-linking of the precursor organic molecules resulting in the insolubility of the hydrocarbon matrix in organic solvents and in the impossibility of particle aggregation in the exposed regions. After immersion of the film into the organic solvent, the exposed areas remain insulating while conducting and semiconducting layers are formed in the nontreated zones due to particle aggregation. The result of patterning is demonstrated by Brewster angle and fluorescent microscopies. The difference of electric properties of treated and nontreated regions is shown by measuring current-voltage characteristics.
引用
收藏
页码:3185 / 3190
页数:6
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