Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation

被引：22

作者：

Demos, SG ^{[1
]}

Staggs, M ^{[1
]}

Yan, M ^{[1
]}

Radousky, HB ^{[1
]}

De Yoreo, JJ ^{[1
]}

机构：

[1] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94580 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.370301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigated using a microscopic fluorescence imaging system with 1 mu m spatial resolution. The observed defect cluster concentration is approximately 10(4)-10(6) per mm(3) depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population. (C) 1999 American Institute of Physics. [S0021-8979(99)05008-2].

引用

页码：3988 / 3992

页数：5

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