Near-field optical photoluminescence microscopy of high-density InAs/GaAs single quantum dots

被引：25

作者：

Eah, SK ^{[1
]}

Jhe, W

Arakawa, Y

机构：

[1] Seoul Natl Univ, Ctr Near Field Atom Photon Technol, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Phys, Seoul 151742, South Korea

[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 15期

关键词：

D O I：

10.1063/1.1466536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We performed low-temperature near-field optical photoluminescence (PL) microscopy of a high-density (>100 mum(-2)) sample of single InAs/GaAs quantum dots (QDs) with very high spatial resolution. Six single QDs of different emission energies are spatially resolved with an apertured fiber probe of 200 nm diam by taking the complete PL spectrum at each point, while the scanning area is 250x250 nm(2). (C) 2002 American Institute of Physics.

引用

页码：2779 / 2781

页数：3

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