Fine structure splitting in the optical spectra of single GaAs quantum dots

被引：889

作者：

Gammon, D

Snow, ES

Shanabrook, BV

Katzer, DS

Park, D

机构：

[1] Naval Research Laboratory, Washington, DC

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.76.3005

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report a photoluminescence study of excitons localized by interface fluctuations in a narrow GaAs/AlGaAs quantum well. This type of structure provides a valuable system for the optical study of quantum dots. By reducing the area of the sample studied down to the optical near-field regime, only a few dots are probed. With resonant excitation we measure the excited-state spectra of single quantum dots. Many of the spectral lines are linearly polarized with a fine structure splitting of 20-50 mu eV. These optical properties are consistent with the characteristic asymmetry of the interface fluctuations.

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页码：3005 / 3008

页数：4

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