SPIN ORIENTATION AT SEMICONDUCTOR HETEROINTERFACES

被引：188

作者：

JUSSERAND, B

RICHARDS, D

ALLAN, G

PRIESTER, C

ETIENNE, B

机构：

[1] UNIV CAMBRIDGE, CAVENDISH LAB, CAMBRIDGE CB3 0HE, ENGLAND

[2] INST SUPER ELECTR N, INST ELECTR & MICROELECTR NORD, VILLENEUVE DASCQ, FRANCE

[3] CNRS, MICROSTRUCT & MICROELECTR LAB, F-92220 BAGNEUX, FRANCE

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.51.4707

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate by Raman scattering that the spin splitting in the conduction band of a GaAs/ Ga1-xAlxAs asymmetric quantum well is anisotropic and inequivalent along the [11̄] and [11] directions. This agrees with the results of tight-binding calculations. The Rashba contribution to the spin orientation induced by the asymmetric potential is of comparable magnitude to the bulk inversion-asymmetry-induced term. Hence, we obtain quantitative information on the origin of the spin orientation at the GaAs/Ga1-xAlxAs interface. © 1995 The American Physical Society.

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收藏

页码：4707 / 4710

页数：4

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