Thermal treatment of CdTe surfaces for radiation detectors

被引：49

作者：

Ozaki, T ^{[1
]}

Iwase, Y ^{[1
]}

Takamura, H ^{[1
]}

Ohmori, M ^{[1
]}

机构：

[1] JAPAN ENERGY CORP,ELECT MAT DIV,TODA,SAITAMA 335,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1996年 / 380卷 / 1-2期

关键词：

D O I：

10.1016/S0168-9002(96)00295-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In order to decrease the leakage current of In/CdTe/Au radiation detectors, thermal treatment of the CdTe wafers was introduced into the detector fabrication process. Detectors were fabricated from Cl-doped THM-grown high-resistivity wafers. The thermal treatment was carried out in a vacuum evaporator at 200-300 degrees C before deposition of the In electrode. An Au electrode was formed by electroless plating. The thermal treatment remarkably decreased the leakage current and improved its stability. The lowest leakage current was obtained when an In electrode was formed on the (111)B surface. AES analysis and RHEED observation showed that the thermal treatment removes an amorphous Te-rich layer. The output current stability could be remarkably improved by thermal treatment when the CdTe detector was operated in current mode.

引用

页码：141 / 144

页数：4

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