Piezo-Phototronic Effect of CdSe Nanowires

被引：83

作者：

Dong, Lin ^{[1
,2
]}

Niu, Simiao ^{[1
]}

Pan, Caofeng ^{[1
]}

Yu, Ruomeng ^{[1
]}

Zhang, Yan ^{[1
]}

Wang, Zhong Lin ^{[1
,3
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450001, Peoples R China

[3] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing, Peoples R China

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 40期

基金：

中国国家自然科学基金;

关键词：

piezo-phototronic; CdSe nanowire; transport property; NANOCRYSTAL THIN-FILM; SINGLE ZNO NANOWIRE; SOLAR-CELLS; QUANTUM DOTS; VOLTAGE; OUTPUT; LIGHT;

D O I：

10.1002/adma.201201385

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The piezo-phototronic effect on transport properties of flexible CdSe NW devices is investigated. An optimum sensitivity of the flexible CdSe NW devices can be achieved by adjusting the applied strain and illumination intensity. The piezo-phototronic effect under compressive strain increases the internal electric field of the Schottky barrier, and assists the separation of the photo-excited electron-hole pairs, resulting in the increase of photocurrent. A trap-mediated mechanism is responsible for the decreased hole separation when the strain is larger than the critical strain. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：5470 / 5475

页数：6

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