HIGH-VOLTAGE POLYCRYSTALLINE CDSE THIN-FILM TRANSISTORS

被引：9

作者：

DEBAETS, J ^{[1
]}

VANFLETEREN, J ^{[1
]}

DERYCKE, I ^{[1
]}

DOUTRELOIGNE, J ^{[1
]}

VANCALSTER, A ^{[1
]}

DEVISSCHERE, P ^{[1
]}

机构：

[1] STATE UNIV GHENT,CTR INTERUNIV MICROELECTR,B-9000 GHENT,BELGIUM

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 03期

关键词：

D O I：

10.1109/16.47767

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of self-aligned high-voltage CdSe thin-film transistors (TFT's) are described. By analyzing the different failure mechanisms, it is found that In-doped CdSe makes feasible device operation up to 200 V. Furthermore, the high-voltage CdSe TFT shows excellent low off currents and high transconductance. © 1990 IEEE

引用

页码：636 / 639

页数：4

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