Experimental Investigation of Linear Cumulative Damage Theory With Power Cycling Test

被引：37

作者：

Zeng, Guang ^{[1
]}

Herold, Christian ^{[1
]}

Methfessel, Torsten ^{[2
]}

Schaefer, Marc ^{[2
]}

Schilling, Oliver ^{[2
]}

Lutz, Josef ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Chair Power Elect & Electromagnet Compatib, D-09126 Chemnitz, Germany

[2] Infineon Technolo AG, D-59581 Warstein, Germany

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 05期

关键词：

Insulated-gate bipolar transistor (IGBT); lifetime prediction; linear cumulative damage theory; Miner's rule; power cycling test; LIFETIME PREDICTION; RELIABILITY;

D O I：

10.1109/TPEL.2018.2859479

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

In this paper, several power cycling tests under single or combined test conditions were undertaken to investigate the applicability of linear cumulative damage theory in the lifetime prediction of power semiconductor devices. The validity of this theory was verified by an experimental method for one lifetime limit, which is an increase of forward voltage at load current by 5%. The corresponding failure mechanism is the degradation of bond wire contacts.

引用

页码：4722 / 4728

页数：7

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