Structural stability of hydrogenated (100) surface of cubic boron nitride in comparison with diamond

被引:21
作者
Komatsu, S
Yarbrough, W
Moriyoshi, Y
机构
[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802
[2] HOSEI UNIV,COLL ENGN,DEPT MAT SCI,KOGANEI,TOKYO 184,JAPAN
关键词
D O I
10.1063/1.365376
中图分类号
O59 [应用物理学];
学科分类号
摘要
In view of (1X1):2H dihydride/(2X1):H monohydride reconstruction, structural stability of (100) surfaces of both cBN and diamond was comparatively investigated by semiempirical molecular orbital methods using isoelectronic clusters of B52N42H80-2n(10+), N52B42H80-2n(10+), and C94H80-2n, to model (100)B and (100)N of cBN, and diamond surface, respectively, where n = 0, 1, 2, or 3. The n denotes the number of monohydride dimers formed. These clusters were nanometer-sized pyramidal crystallites bound by four of {111} faces and one (100). The (100)N of cBN was found unique because of the great stability as (1x1):2H dihydride phase, which retains the bulk structure truncated at the surface without reconstruction and is expected to be chemically inert. This passivation seems to be related to the difficulty in chemical vapor deposition of high quality cBN. The (100)B of cBN was predicted to stabilize as (2X1):H monohydride phase as much as hydrogenated (100) of diamond does. (C) 1997 American Institute of Physics.
引用
收藏
页码:7798 / 7805
页数:8
相关论文
共 78 条
[1]   HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPIC STUDY OF EPITAXIALLY GROWN DIAMOND (111) AND (100) SURFACES [J].
AIZAWA, T ;
ANDO, T ;
KAMO, M ;
SATO, Y .
PHYSICAL REVIEW B, 1993, 48 (24) :18348-18351
[2]   CONFORMATIONAL-ANALYSIS .130. MM2 - HYDROCARBON FORCE-FIELD UTILIZING V1 AND V2 TORSIONAL TERMS [J].
ALLINGER, NL .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1977, 99 (25) :8127-8134
[3]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[4]   METASTABLE SYNTHESIS OF DIAMOND [J].
ANTHONY, TR .
VACUUM, 1990, 41 (4-6) :1356-1359
[5]   HYDROGEN CHEMISORPTION ON 100 (2X1) SURFACES OF SI AND GE [J].
APPELBAUM, JA ;
BARAFF, GA ;
HAMANN, DR ;
HAGSTRUM, HD ;
SAKURAI, T .
SURFACE SCIENCE, 1978, 70 (01) :654-673
[6]   SURFACE PHASES OF GAAS(100) AND ALAS(100) [J].
BACHRACH, RZ ;
BAUER, RS ;
CHIARADIA, P ;
HANSSON, GV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03) :797-801
[7]   HYDROGEN-ATOM DETECTION IN THE FILAMENT-ASSISTED DIAMOND DEPOSITION ENVIRONMENT [J].
CELII, FG ;
BUTLER, JE .
APPLIED PHYSICS LETTERS, 1989, 54 (11) :1031-1033
[8]   SURFACE INFRARED STUDY OF SI(100)-(2X1)H [J].
CHABAL, YJ ;
RAGHAVACHARI, K .
PHYSICAL REVIEW LETTERS, 1984, 53 (03) :282-285
[9]  
CHAHABAL YJ, 1986, SURF SCI, V168, P594
[10]   EPITAXIAL-GROWTH OF DIAMOND FILMS ON THE (221) AND (100) SURFACES OF C-BN WITH MICROSTRUCTURES FULL OF (100) FACETS [J].
CHAI, WP ;
GU, YS ;
LI, M ;
MAI, ZH ;
LI, QZ ;
YUAN, L ;
PANG, SJ .
APPLIED PHYSICS LETTERS, 1994, 64 (15) :1941-1943